20 nm N + abrupt junction formation in Strained Si/Si 1-xGe x MOS device
- K.L. Lee
- F. Cardone
- et al.
- 2003
- IEDM 2003
Conference paper
Publications
48 results for Paul Ronsheim
Strained Si CMOS (SS CMOS) technology: Opportunities and challenges
- K. Rim
- R. Anderson
- et al.
- 2003
- Solid-State Electronics
Conference paperSub-30 nm P+ abrupt junction formation in strained Si/Si1-xGex MOS device
- K.L. Lee
- J.O. Chu
- et al.
- 2002
- IEDM 2002
Conference paperHigh temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation
- S. Guha
- E. Gusev
- et al.
- 2002
- Applied Physics Letters
PaperModeling of the diffusion of implanted boron in strained Si/Si1-xGex
- Huilong Zhu
- Kam-Leung Lee
- et al.
- 2002
- SISPAD 2002
Conference paperMapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography
- M. Gribelyuk
- M.R. McCartney
- et al.
- 2002
- Physical Review Letters
PaperNitrogen-induced transient enhanced diffusion of dopants
- Cheruvu Murthy
- Kilho Lee
- et al.
- 2002
- Applied Physics Letters
PaperBackside sputter depth profiling of phosphorus diffusion from a polysilicon source
- P.A. Ronsheim
- D. Chidambarrao
- et al.
- 2002
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Conference paperStrained Si NMOSFETs for high performance CMOS technology
- K. Rim
- S.J. Koester
- et al.
- 2001
- VLSI Technology 2001
Conference paperUltrathin high-K gate stacks for advanced CMOS devices
- E. Gusev
- D.A. Buchanan
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting
Paper