Transient enhanced diffusion and dose loss of indium in silicon
- Omer Dokumaci
- Paul Ronsheim
- et al.
- 1999
- MRS Spring Meeting 1999
Paper
Publications
48 results for Paul Ronsheim
Comparison of secondary ion mass spectrometry profiling of sub-100 nm ultrashallow junctions using NO+2 and O+2 sputtering
- P.A. Ronsheim
- K.L. Lee
- 1998
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ReviewTwo-dimensional profiling of shallow junctions in Si metal-oxide-semiconductor structures using scanning tunneling spectroscopy and transmission electron microscopy
- E.T. Yu
- K. Barmak
- et al.
- 1996
- Journal of Applied Physics
PaperDopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
- Joachim N. Burghartz
- Carol L. Stanis
- et al.
- 1995
- Applied Physics Letters
PaperIndium Channel Implant for Improved Short-Channel Behavior of Submicrometer NMOSFET's
- G. Shahidi
- Bijan Davari
- et al.
- 1993
- IEEE Electron Device Letters
PaperLow thermal budget antimony/phosphorus NMOS technology for CMOS
- D.L. Harame
- E. Ganin
- et al.
- 1991
- IEDM 1991
Conference paperImplantation damage and the anomalous transient diffusion of ion-implanted boron
- Alwin E. Michel
- W. Rausch
- et al.
- 1987
- Applied Physics Letters
PaperRapid annealing and the anomalous diffusion of ion implanted boron into silicon
- Alwin E. Michel
- W. Rausch
- et al.
- 1987
- Applied Physics Letters
Paper