Technology challenges and enablers to extend Cu metallization to beyond 7 nm node
- Takeshi Nogami
- H. Huang
- et al.
- 2019
- VLSI Technology 2019
Conference paper
Publications
59 results for B. Haran
Gate-Cut-Last in RMG to Enable Gate Extension Scaling and Parasitic Capacitance Reduction
- A. Greene
- Huimei Zhou
- et al.
- 2019
- VLSI Technology 2019
Conference paperExtendable and Manufacturable Volume-less Multi-Vt Solution for 7nm Technology Node and beyond
- Ruqiang Bao
- Huimei Zhou
- et al.
- 2018
- IEDM 2018
Conference paperNovel Materials and Processes in Replacement Metal Gate for Advanced CMOS Technology
- Ruqiang Bao
- Steven Hung
- et al.
- 2018
- IEDM 2018
Conference paperAdvanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices
- Shogo Mochizuki
- B. Colombeau
- et al.
- 2018
- IEDM 2018
Conference paperParasitic Resistance Reduction Strategies for Advanced CMOS FinFETs beyond 7nm
- Heng Wu
- Oleg Gluschenkov
- et al.
- 2018
- IEDM 2018
Conference paperAnnealing and impurity effects in co thin films for MOL Contact and BEOL metallization
- James Kelly
- Vimal Kamineni
- et al.
- 2018
- JES
PaperGas cluster ion beam processing for improved self aligned contact yield at 7 nm node FinFET: MJ: MOL and junction interfaces
- Su Chen Fan
- Sean Teehan
- et al.
- 2018
- ASMC 2018
Conference paperUV Assisted Densification of PerHydroPoIySilazane (PHPS) based Spin-On glass in High Aspect Ratio Gap Fill Structure
- S. Mehta
- H. Sheng
- et al.
- 2018
- ECS Meeting 2018
Conference paperA comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2017
- IEDM 2017
Conference paper