NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning
- Sangbum Kim
- Masatoshi Ishii
- et al.
- 2015
- IEDM 2015
Conference paper
Publications
34 results for Kohji Hosokawa
A 5.3GHz 8T-SRAM with operation down to 0.41V in 65nm CMOS
- Leland Chang
- Yutaka Nakamura
- et al.
- 2007
- VLSI Circuits 2007
Conference paperA 220-mm2, four- and eight-bank, 256-Mb SDRAM with single-sided stitched WL architecture
- Toshiaki Kirihata
- Martin Gall
- et al.
- 1998
- IEEE Journal of Solid-State Circuits
Paper220 mm2 4 and 8 bank 256 Mb SDRAM with single-sided stitched WL architecture
- T. Kirihata
- M. Gall
- et al.
- 1998
- ISSCC 1998
Conference paper