Publications

2 results for Ryan Rettmann

Deposited ALD SiO₂ high-k/metal gate interface for high voltage analog and I/O devices on next generation alternative channels and FINFET device structures
- - S. Siddiqui
  - M.M. Chowdhury
  - et al.
- 2013
- ECS Meeting 2013
Conference paper
Single wafer cleaning lessons in advanced node gate module development
- - David F. Hilscher
  - Daniel Jaeger
  - et al.
- 2013
- ASMC 2013
Conference paper