Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects
- A. Simon
- Tibor Bolom
- et al.
- 2013
- IRPS 2013
Conference paper
Publications
7 results for J.F. Aubuchon
Dependence of Cu electromigration resistance on selectively deposited CVD Co cap thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2013
- Microelectronic Engineering
PaperIn-situ metal/dielectric capping process for electromigration enhancement in Cu interconnects
- Chih-Chao Yang
- Fen Chen
- et al.
- 2012
- IITC 2012
Conference paperIn situ Co/SiC(N,H) capping layers for Cu/Low-k interconnects
- Chih-Chao Yang
- B. Li
- et al.
- 2012
- IEEE Electron Device Letters
PaperCVD Co capping layers for Cu/low-k interconnects: Cu em enhancement vs. Co thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2011
- IITC/MAM 2011
Conference paperCharacterization of copper electromigration dependence on selective chemical vapor deposited cobalt capping layer thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2011
- IEEE Electron Device Letters
PaperCVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
Conference paper