Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
Conference paper
Publications
178 results for Wilfried Haensch
Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
Conference paperUniversal tunneling behavior in technologically relevant P/N junction diodes
- Paul M. Solomon
- Jason Jopling
- et al.
- 2004
- Journal of Applied Physics
PaperCompact modeling methodology of strained-Si channel-on-insulator (SSOI) MOSFETs
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2004
- International Journal of Electronics
PaperSelf-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
- Hulling Shang
- Kam-Leung Lee
- et al.
- 2004
- IEEE Electron Device Letters
PaperTunnel Current Measurements on P/N Junction Diodes and Implications for Future Device Design
- Paul M. Solomon
- David J. Frank
- et al.
- 2003
- IEDM 2003
Conference paperThreshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS)
- Jakub Kedzierski
- Diane Boyd
- et al.
- 2003
- IEDM 2003
Conference paperDevice Design Considerations for Ultra-Thin SOI MOSFETs
- B. Doris
- M. Ieong
- et al.
- 2003
- IEDM 2003
Conference paperIssues in NiSi-gated FDSOI device integration
- Jakub Kedzierski
- Diane Boyd
- et al.
- 2003
- IEDM 2003
Conference paperThree dimensional CMOS devices and integrated circuits
- Meikei Ieong
- Kathryn W. Guarini
- et al.
- 2003
- CICC 2003
Conference paper