Single-step deep reactive ion etch of silicon for through-via applications with alternative gas mixtures
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- 2025
- Journal of Vacuum Science and Technology A Vacuum Surfaces and Films
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10 results for Bang To
Sub-30 nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly
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- Hiroyuki Miyazoe
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- 2012
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
PaperA 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch
- Michael A. Guillorn
- Josephine Chang
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- 2011
- VLSI Technology 2011
Conference paperHydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping
- M. Guillorn
- J. Chang
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- 2009
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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- M. Guillorn
- J. Chang
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- IEDM 2009
Conference paperPlasma etching of nanometer-scale self-assembled features
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- Charles T. Black
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- 2008
- ISTC 2008
Conference paperFinFET performance advantage at 22nm: An AC perspective
- M. Guillorn
- J. Chang
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- 2008
- VLSI Technology 2008
Conference paperInvestigation of FinFET devices for 32nm technologies and beyond
- H. Shang
- L. Chang
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- 2006
- VLSI Technology 2006
Conference paperHigh Performance CMOS Fabricated on Hybrid Substrate with Different Crystal Orientations
- M. Yang
- M. Ieong
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- 2003
- IEDM 2003
Conference paperFabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs
- K. Rim
- K.K. Chan
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