Modeling and analysis of transistor mismatch due to variability in short-channel effect induced by random dopant fluctuationNauman Z. ButtJeffrey B. Johnson2012IEEE Electron Device LettersPaper
A 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technologyNauman Z. ButtKevin McStayet al.2010IEDM 2010Conference paper
Scaling deep trench based eDRAM on SOI to 32nm and beyondG. WangD. Anandet al.2009IEDM 2009Conference paper