Robust ultrathin (20-25 nm) trilayer dielectric low k Cu damascene cap for sub-30 nm nanoelectronic devices
- Son Nguyen
- T. Haigh
- et al.
- 2011
- ECS Meeting 2011
Conference paper
Publications
6 results for H. Yusuff
Plasma etch challenges for porous low k materials for 32nm and beyond
- Catherine Labelle
- R. Srivastava
- et al.
- 2011
- CSTIC 2011
Conference paperPerformance of tri-layer process required for 22nm and beyond
- Yayi Wei
- Martin Glodde
- et al.
- 2011
- SPIE Advanced Lithography 2011
Conference paperSystematic studies on reactive ion etch-induced deformations of organic underlayers
- Martin Glodde
- Sebastian Engelmann
- et al.
- 2011
- SPIE Advanced Lithography 2011
Conference paperUV curing-induced photoresist poisoning in advanced ULK BEOL integration schemes
- Y.C. Ee
- D. Kioussis
- et al.
- 2009
- ADMETA 2009
Conference paperPorous low-k material etch for 32 nm and beyond
- Catherine Labelle
- John Arnold
- et al.
- 2008
- ADMETA 2008
Conference paper