65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
Conference paper
Publications
30 results for J. Gill
BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65nm groundrules
- S. Lane
- M. Fukasawa
- et al.
- 2005
- AMC 2005
Conference paperA SiCOH BEOL interconnect technology for high density and high performance 65 nm CMOS applications
- Matthew Angyal
- Jason Gill
- et al.
- 2005
- AMC 2005
Conference paperDamascene copper integration impact on electomigration and stress migration
- Anthony K. Stamper
- H. Baks
- et al.
- 2005
- AMC 2005
Conference paperPECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
Conference paperDetermination of the thermal conductivity of composite low-k dielectrics for advanced interconnect structures
- F. Chen
- J. Gill
- et al.
- 2006
- Microelectronics Reliability
PaperExtendibility of PVD barrier/seed for BEOL Cu metallization
- C.-C. Yang
- D. Edelstein
- et al.
- 2005
- IITC 2005
Conference paperBEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65 nm groundrules
- M. Fukasawa
- S. Lane
- et al.
- 2005
- IITC 2005
Conference paperLower-k SiCOH integration for 65 nm ground rules
- T. Nogami
- S. Lane
- et al.
- 2005
- VMIC 2005
Conference paperHigh performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
- W.-H. Lee
- A. Waite
- et al.
- 2005
- IEDM 2005
Conference paper