High performance transistors featured in an aggressively scaled 45nm bulk CMOS technology
- Z. Luo
- N. Rovedo
- et al.
- 2007
- VLSI Technology 2007
Conference paper
Publications
19 results for John Sudijono
Stress proximity technique for performance improvement with dual stress liner at 45nm technology and beyond
- X. Chen
- S. Fang
- et al.
- 2006
- VLSI Technology 2006
Conference paperNovel enhanced stressor with graded embedded SiGe source/drain for high performance CMOS devices
- J.-P. Han
- H. Utomo
- et al.
- 2006
- IEDM 2006
Conference paperA 45nm low cost low power platform by using integrated dual-stress-liner technology
- J. Yuan
- S.S. Tan
- et al.
- 2006
- VLSI Technology 2006
Conference paperImpact of NBTI induced statistical variation to SRAM cell stability
- Giuseppe La Rosa
- Wee Loon Ng
- et al.
- 2006
- IRPS 2006
Conference paperInteraction of middle-of-line (MOL) temperature and mechanical stress on 90nm hi-speed device performance and reliability
- K.Y. Lim
- V. Chan
- et al.
- 2005
- ESSDERC 2005
Conference paperSRAM Cell Design for Stability Methodology
- Clement Wann
- Robert Wong
- et al.
- 2005
- VLSI Technology 2005
Conference paperHigh performance and low power transistors integrated in 65nm bulk CMOS technology
- Z. Luo
- A. Steegen
- et al.
- 2004
- IEDM 2004
Conference paperDual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
- H.S. Yang
- R. Malik
- et al.
- 2004
- IEDM 2004
Conference paper