A comprehensive simulation study of strained-Si/SiGe nMODFET scaling for RF applications
- Qiqing Christine Ouyang
- S.J. Koester
- et al.
- 2002
- SISPAD 2002
Conference paper
Publications
148 results for Jack O. Chu
Electron and hole mobility enhancement in strained SOI by wafer bonding
- Lijuan Huang
- Jack O. Chu
- et al.
- 2002
- IEEE Transactions on Electron Devices
PaperQuantum-ballistic transport in an etch-defined Si/SiGe quantum point contact
- U. Wieser
- U. Kunze
- et al.
- 2002
- Applied Physics Letters
PaperCharacteristics and device design of sub-100 nm strained Si N- and PMOSFETs
- K. Rim
- J.O. Chu
- et al.
- 2002
- VLSI Technology 2002
Conference paperMobility enhancement in strained Si NMOSFETs with HfO2 gate dielectrics
- K. Rim
- E. Gusev
- et al.
- 2002
- VLSI Technology 2002
Conference paperAbsolute rate constants for silylene reactions with hydrocarbons at 298 K
- Jack O. Chu
- David B. Beach
- et al.
- 2002
- Journal of Physical Chemistry
PaperFabrication of Si/SiGe quantum point contacts by electron-beam lithography and shallow wet-chemical etching
- U. Wieser
- U. Kunze
- et al.
- 2002
- Physica E: Low-Dimensional Systems and Nanostructures
PaperThermal stability of strained Si on relaxed Si1-xGex buffer layers
- P.M. Mooney
- S.J. Koester
- et al.
- 2001
- MRS Proceedings 2001
Conference paperStrain relaxation mechanisms in He+-implanted and annealed Si1-xGex layers on Si(001) substrates
- S. Christiansen
- P.M. Mooney
- et al.
- 2001
- MRS Proceedings 2001
Conference paperEffect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
- S.J. Koester
- K. Rim
- et al.
- 2001
- Applied Physics Letters
Paper