Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD
- S.J. Koester
- R. Hammond
- et al.
- 2000
- IEEE Electron Device Letters
Paper
Publications
148 results for Jack O. Chu
SiGe technology: Heteroepitaxy and high-speed microelectronics
- P.M. Mooney
- J.O. Chu
- 2000
- Annual Review of Materials Science
PaperSiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition
- P.M. Mooney
- J.O. Chu
- et al.
- 2000
- Journal of Electronic Materials
PaperHigh transconductance 0.1 μm Ge/Si0.4Ge0.6 Schottky-gated p-MODFETs
- R. Hammond
- S.J. Koester
- et al.
- 1999
- DRC 1999
PaperHigh-performance SiGe pMODFETs grown by UHV-CVD
- S.J. Koester
- R. Hammond
- et al.
- 1999
- EDMO 1999
Conference paperp-Type SiGe transistors with low gate leakage using SiN gate dielectric
- W. Lu
- X.W. Wang
- et al.
- 1999
- IEEE Electron Device Letters
PaperHigh-performance 0.1μm gate-length Ge/Si0.4Ge0.6 p-channel MODFETs
- R. Hammond
- S.J. Koester
- et al.
- 1999
- Electronics Letters
PaperQuantum indistinguishability effects of confined polyexcitons
- Kai Shum
- P.M. Mooney
- et al.
- 1999
- Physical Review B - CMMP
PaperHole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire
- Suraj J. Mathew
- Guofu Niu
- et al.
- 1999
- IEEE Electron Device Letters
PaperHigh-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD
- S.J. Koester
- J.O. Chu
- et al.
- 1999
- Electronics Letters
Paper