NONEQUILIBRIUM PHONONS AND DISORDER IN Al//xGa//1// minus //xAs.
- J.A. Kash
- J.C. Tsang
- et al.
- 1986
- TMPEO 1986
Conference paper
Publications
135 results for James C. Tsang
Symmetry forbidden Raman scattering from (100) surfaces of oxidized Si and Ge
- J.C. Tsang
- 1986
- Applied Physics Letters
PaperPicosecond spectroscopy of hot anti-Stokes luminescence in GaAs
- J.C. Tsang
- J.A. Kash
- 1986
- Physical Review B
PaperRaman scattering in the presence of photoexcited nonequilibrium carriers in semiconductors: Theoretical considerations
- Sudhanshu S. Jha
- J.A. Kash
- et al.
- 1986
- Physical Review B
PaperSummary Abstract: Reactive ion-etching-related Si surface residues and subsurface disorder
- G.S. Oehrlein
- J.G. Clabes
- et al.
- 1986
- JVSTA
PaperSubpicosecond time-resolved Raman spectroscopy of LO phonons in GaAs
- J.A. Kash
- J.C. Tsang
- et al.
- 1985
- Physical Review Letters
PaperRaman spectroscopy of hot electron relaxation in GaAs
- J.C. Tsang
- J.A. Kash
- et al.
- 1985
- Physica B+C
PaperRaman spectroscopy of reactive ion etching induced subsurface damage
- J.C. Tsang
- G.S. Oehrlein
- et al.
- 1985
- Applied Physics Letters
PaperSummary Abstract: Raman scattering at buried semiconductor-metal interfaces
- J.C. Tsang
- 1985
- JVSTA
PaperRaman spectroscopy of PtSi formation at the Pt/Si(100) interface
- J.C. Tsang
- Y. Yokota
- et al.
- 1984
- Applied Physics Letters
Paper