Publications

2 results for M.T. Bulsara

High mobility In _0.53Ga _0.47As quantum-well metal oxide semiconductor field effect transistor structures
- - Li Yang
  - Cheng-Wei Cheng
  - et al.
- 2012
- Journal of Applied Physics
Paper
Effect of Al₂O₃/InGaAs interface on channel mobility
- - L. Yang
  - C.-W. Cheng
  - et al.
- 2011
- ECS Meeting 2011
Conference paper