CHARGE TRAPPING IN GaAs/AlGaAs MODULATION DOPED FETs.
- P.M. Mooney
- P. Solomon
- et al.
- 1984
- Gallium Arsenide and Related Compounds 1984
Conference paper
Publications
119 results for P.M. Mooney
Room-temperature electron trapping in Al0.35Ga 0.65As/GaAs modulation-doped field-effect transistors
- Marshall I. Nathan
- P.M. Mooney
- et al.
- 1985
- Applied Physics Letters
PaperDeep levels introduced during electron-beam deposition of metals on n-type silicon
- F.D. Auret
- P.M. Mooney
- 1984
- Journal of Applied Physics
PaperTransient capacitance study of defects introduced by electron-beam deposition of metals on p-type silicon
- F.D. Auret
- P.M. Mooney
- 1984
- Journal of Applied Physics
PaperDefect creation by subthreshold irradiation in semiconductors
- P.M. Mooney
- J.C. Bourgoin
- 1984
- Physical Review B
PaperPhoto-deep level transient spectroscopy: A technique to study deep levels in heavily compensated semiconductors
- P.M. Mooney
- 1983
- Journal of Applied Physics
PaperAnnealing of electron-induced defects in n-type germanium
- P.M. Mooney
- F. Poulin
- et al.
- 1983
- Physical Review B
PaperCorrelated DLTS and EPR measurements of defects in As-grown and electron irradiated p-type GaP
- P.M. Mooney
- T.A. Kennedy
- et al.
- 1983
- Physica B+C
PaperA transient capacitance study of radiation‐induced defects in aluminum‐doped silicon
- Y.H. Lee
- K.L. Wang
- et al.
- 1980
- physica status solidi (a)
Paper