Demonstration of a high performance 40-nm-gate carbon nanotube field-effect transistor
- Y.-M. Lin
- J. Appenzeller
- et al.
- 2005
- DRC 2005
Conference paper
Publications
91 results for Joerg Appenzeller
Impact of the nanotube diameter on the performance of CNFETs
- Zhihong Chen
- Joerg Appenzeller
- et al.
- 2005
- DRC 2005
Conference paperHigh-performance dual-gate carbon nanotube FETs with 40-nm gate length
- Yu-Ming Lin
- Joerg Appenzeller
- et al.
- 2005
- IEEE Electron Device Letters
PaperQuantum kinetic description of Coulomb effects in one-dimensional nanoscale transistors
- K.M. Indlekofer
- J. Knoch
- et al.
- 2005
- Physical Review B - CMMP
PaperHigh-performance carbon nanotube field-effect transistor with tunable polarities
- Yu-Ming Lin
- Joerg Appenzeller
- et al.
- 2005
- IEEE TNANO
PaperThe role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors
- Zhihong Chen
- Joerg Appenzeller
- et al.
- 2005
- Nano Letters
PaperDirect measurements of frequency response of carbon nanotube field effect transistors
- D. Singh
- Keith A. Jenkins
- et al.
- 2005
- Electronics Letters
PaperComparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
- J. Knoch
- S. Mantl
- et al.
- 2005
- Solid-State Electronics
PaperAC and DC characteristics of carbon nanotube field-effect transistors
- J. Appenzeller
- 2004
- BCTM 2004
Conference paperNovel carbon nanotube FET design with tunable polarity
- Yu-Ming Lin
- Joerg Appenzeller
- et al.
- 2004
- IEDM 2004
Conference paper