Interaction of hexafluoroazomethane with Si(111)
- F.R. McFeely
- J.A. Yarmoff
- et al.
- 1988
- The Journal of Chemical Physics
Paper
Publications
94 results for Fenton R. McFeely
Dielectrics on semiconductors
- F.J. Himpsel
- U.O. Karlsson
- et al.
- 1988
- Materials Science and Engineering B
PaperOxygen removal from Si via reaction with adsorbed Ge
- J.F. Morar
- B.S. Meyerson
- et al.
- 1987
- Applied Physics Letters
PaperMODEL SYSTEMS IN THE STUDY OF ETCHING MECHANISMS.
- F.R. McFeely
- J.F. Morar
- et al.
- 1986
- Symposium on Plasma Processing 1986
Conference paperMechanism of ion-assisted etching of silicon by fluorine atoms
- J.A. Yarmoff
- F.R. McFeely
- 1987
- Surface Science
PaperElectronic structure of the CaF2/Si(111) interface
- D. Rieger
- F.J. Himpsel
- et al.
- 1986
- Physical Review B
PaperFormation of a new ordered structure of CaF2/Si(111) by ultraviolet irradiation
- U.O. Karlsson
- F.J. Himpsel
- et al.
- 1986
- Physical Review Letters
PaperC 1s excitation studies of diamond (111). I. Surface core levels
- J.F. Morar
- F.J. Himpsel
- et al.
- 1986
- Physical Review B
PaperC 1s excitation studies of diamond (111). II. Unoccupied surface states
- J.F. Morar
- F.J. Himpsel
- et al.
- 1986
- Physical Review B
PaperSoft X-ray photoemission study of the silicon-fluorine etching reaction
- F.R. McFeely
- J.F. Morar
- et al.
- 1986
- Surface Science
Paper