Metal–GaAs interaction and contact degradation in microwave MESFETs
- Enrico Zanoni
- Alessandro Callegari
- et al.
- 2007
- Quality and Reliability Engineering International
Paper
Publications
72 results for Alessandro Callegari
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
Conference paperA comparative study of NBTI and PBTI (Charge Trapping) in SiO 2/HfO2 stacks with FUSI, TiN, Re gates
- S. Zafar
- Y.-H. Kim
- et al.
- 2006
- VLSI Technology 2006
Conference paperThermal stability of HfN compounds on HfO2/SiO2 gate stacks
- A.C. Callegari
- M. Gribelyuk
- et al.
- 2006
- ECS Meeting 2006
Conference paperElectron mobility dependence on annealing temperature of W/HfO 2 gate stacks: The role of the interfacial layer
- A.C. Callegari
- P. Jamison
- et al.
- 2006
- Journal of Applied Physics
PaperElectron mobility dependence of W/HFO 2 gate stacks on interfacial layer preparation
- A.C. Callegari
- P. Jamison
- et al.
- 2005
- ECS Meeting 2005
Conference paperOptimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- R. Jammy
- V. Narayanan
- et al.
- 2005
- ISTC 2005
Conference paperHfO 2/metal stacks: Determination of energy level diagram, work functions & their dependence on metal deposition
- S. Zafar
- V. Narayanan
- et al.
- 2005
- VLSI Technology 2005
Conference paperA comparative study of NBTI as a function of Si substrate orientation and gate dielectrics (SiON and SiON/HfO 2)
- S. Zafar
- M. Yang
- et al.
- 2005
- VLSI Technology 2005
Conference paperA study of negative bias temperature instability (NBTI) in pFETs
- Sufi Zafar
- James Stathis
- et al.
- 2005
- ECS Meeting 2005
Conference paper