Maximized benefit of LaAlO higher-κ gate dielectrics by optimizing the La/Al atomic ratio
- Hiroaki Arimura
- Stephen L. Brown
- et al.
- 2011
- IEEE Electron Device Letters
Paper
Publications
5 results for Heiji Watanabe
Physical origins of mobility degradation in extremely scaled SiO 2 / HfO2 gate stacks with la and Al induced dipoles
- Takashi Ando
- Matt Copel
- et al.
- 2010
- Applied Physics Letters
PaperTemperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy
- Hiroaki Arimura
- Richard Haight
- et al.
- 2010
- Applied Physics Letters
PaperUltimate EOT scaling (< 5Å) using Hf-based high-κ gate dielectrics and impact on carrier mobility
- Takashi Ando
- Martin M. Frank
- et al.
- 2010
- ECS Transactions
Conference paperBand-edge high-performance metal-gate/high-κ nMOSFET using Hf-Si/HfO 2 stack
- Takashi Ando
- Tomoyuki Hirano
- et al.
- 2009
- IEEE Transactions on Electron Devices
Paper