Maximized benefit of LaAlO higher-κ gate dielectrics by optimizing the La/Al atomic ratio
- Hiroaki Arimura
- Stephen L. Brown
- et al.
- 2011
- IEEE Electron Device Letters
Paper
Publications
93 results for Takashi Ando
Ruthenium based metals using atomic vapor deposition for gate electrode applications
- Changhwan Choi
- Takashi Ando
- et al.
- 2011
- Applied Physics Letters
PaperPhysical origins of mobility degradation in extremely scaled SiO 2 / HfO2 gate stacks with la and Al induced dipoles
- Takashi Ando
- Matt Copel
- et al.
- 2010
- Applied Physics Letters
PaperTemperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy
- Hiroaki Arimura
- Richard Haight
- et al.
- 2010
- Applied Physics Letters
PaperUltimate EOT scaling (< 5Å) using Hf-based high-κ gate dielectrics and impact on carrier mobility
- Takashi Ando
- Martin M. Frank
- et al.
- 2010
- ECS Transactions
Conference paperOxygen transport in high-κ/ metal gate stacks and physical characterization by SIMS using isotope labeled oxygen
- Marinus Hopstaken
- John Bruley
- et al.
- 2010
- ECS Transactions
Conference paperBand-edge high-performance metal-gate/high-κ nMOSFET using Hf-Si/HfO 2 stack
- Takashi Ando
- Tomoyuki Hirano
- et al.
- 2009
- IEEE Transactions on Electron Devices
PaperUnderstanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t-tuning dipoles with gate-first process
- T. Ando
- M.M. Frank
- et al.
- 2009
- IEDM 2009
Conference paperExtremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond
- K. Choi
- H. Jagannathan
- et al.
- 2009
- VLSI Technology 2009
Conference paperpFET V t control with HfO 2/TiN/poly-Si gate stack using a lateral oxygenation process
- B. Cartier
- M. Steen
- et al.
- 2009
- VLSI Technology 2009
Conference paper