High-speed Germanium-on-SOI lateral PIN photodiodes
- G. Dehlinger
- S.J. Koester
- et al.
- 2004
- IEEE Photonics Technology Letters
Paper
Publications
36 results for Q. Ouyang
High speed, lateral PIN photodiodes in silicon technologies
- Jeremy D. Schaub
- Steven J. Koester
- et al.
- 2004
- SPIE IOPTO 2004
Conference paperHigh-performance SiGe MODFET technology
- S.J. Koester
- J.O. Chu
- et al.
- 2004
- MRS Proceedings 2004
Conference paperVertical SiGe-base bipolar transistors on CMOS-compatible SOI substrate
- Jin Cai
- Mahender Kumar
- et al.
- 2003
- BCTM 2003
Conference paper80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax
- S.J. Koester
- K.L. Saenger
- et al.
- 2003
- Electronics Letters
PaperImplications of gate design on RF performance of sub-100 nm strained-Si/SiGe nMODFETs
- Q. Ouyang
- S.J. Koester
- et al.
- 2003
- SISPAD 2003
Conference paperHigh speed lateral trench detectors with a junction substrate
- Qiqing Ouyang
- J. Schaub
- 2003
- Device Research Conference 2003
Conference paperStatic frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs
- D. Singh
- S.J. Koester
- et al.
- 2003
- Electronics Letters
PaperImproved hot-carrier and short-channel performance in vertical nMOSFETs with graded channel doping
- Xiangdong Chen
- Qiqing Christine Ouyang
- et al.
- 2002
- IEEE Transactions on Electron Devices
PaperA simulation study on thin SOI bipolar transistors with fully or partially depleted collector
- Qiqing Ouyang
- Jin Cai
- et al.
- 2002
- BCTM 2002
Conference paper