Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation
- J. Knoch
- M. Zhang
- et al.
- 2005
- Applied Physics Letters
Paper
Publications
55 results for J. Knoch
Comparing carbon nanotube transistors - The ideal choice: A novel tunneling device design
- Joerg Appenzeller
- Yu-Ming Lin
- et al.
- 2005
- IEEE Transactions on Electron Devices
PaperA novel concept for field-effect transistors - The tunneling carbon nanotube FET
- J. Knoch
- J. Appenzeller
- 2005
- DRC 2005
Conference paperImpact of the nanotube diameter on the performance of CNFETs
- Zhihong Chen
- Joerg Appenzeller
- et al.
- 2005
- DRC 2005
Conference paperQuantum kinetic description of Coulomb effects in one-dimensional nanoscale transistors
- K.M. Indlekofer
- J. Knoch
- et al.
- 2005
- Physical Review B - CMMP
PaperHigh-performance carbon nanotube field-effect transistor with tunable polarities
- Yu-Ming Lin
- Joerg Appenzeller
- et al.
- 2005
- IEEE TNANO
PaperThe role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors
- Zhihong Chen
- Joerg Appenzeller
- et al.
- 2005
- Nano Letters
PaperComparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
- J. Knoch
- S. Mantl
- et al.
- 2005
- Solid-State Electronics
PaperAn extended model for carbon nanotube field-effect transistors
- J. Knoch
- S. Mantl
- et al.
- 2004
- DRC 2004
Conference paperBand-to-band tunneling in carbon nanotube field-effect transistors
- J. Appenzeller
- Y.-M. Lin
- et al.
- 2004
- Physical Review Letters
Paper