Very high performance 50 nm CMOS at low temperatureS.J. WindL.T. Shiet al.1999IEDM 1999Conference paper
Transient enhanced diffusion and dose loss of indium in siliconOmer DokumaciPaul Ronsheimet al.1999MRS Spring Meeting 1999Paper
Sub-30 nm abrupt P+ junction formation with Ge preamorphization and high energy Si co-implantationK.L. LeeTed Zabelet al.1999MRS Spring Meeting 1999Paper
Polycrystalline silicon formation by pulsed rapid thermal annealing of amorphous siliconYue KuoP. Kozlowski1996Applied Physics LettersPaper