Epitaxial formation of a metastable hexagonal nickel-silicide
- K. De Keyser
- C. Van Bockstael
- et al.
- 2008
- Electrochemical and Solid-State Letters
Paper
Publications
19 results for R.L. Van Meirhaeghe
In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon
- W. Knaepen
- C. Detavernier
- et al.
- 2008
- Thin Solid Films
PaperThin film solid-state reactions forming carbides as contact materials for carbon-containing semiconductors
- W.P. Leroy
- C. Detavernier
- et al.
- 2007
- Journal of Applied Physics
PaperFormation and morphological stability of NiSi in the presence of W, Ti, and Ta alloying elements
- D. Deduytsche
- C. Detavernier
- et al.
- 2007
- Journal of Applied Physics
PaperInfluence of Ge substrate crystallinity on Co germanide formation in solid-state reactions
- K. Opsomer
- D. Deduytsche
- et al.
- 2007
- Applied Physics Letters
PaperSolid-state formation of titanium carbide and molybdenum carbide as contacts for carbon-containing semiconductors
- W.P. Leroy
- C. Detavernier
- et al.
- 2006
- Journal of Applied Physics
PaperHigh-temperature degradation of NiSi films: Agglomeration versus NiSi 2 nucleation
- D. Deduytsche
- C. Detavernier
- et al.
- 2005
- Journal of Applied Physics
PaperCoSi2 formation in the presence of Ti, Ta or W
- C. Detavernier
- C. Lavoie
- et al.
- 2004
- Thin Solid Films
PaperLow-temperature formation of CoSi 2 in the presence of Au
- C. Detavernier
- C. Lavoie
- et al.
- 2004
- Journal of Applied Physics
Paper