Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing
- G. Shahidi
- B. Davari
- et al.
- 1990
- IEDM 1990
Conference paper
Publications
50 results for B. Davari
Voltage dependence of the MOSFET gate-to-source/drain overlap
- C.S. Oh
- W.H. Chang
- et al.
- 1990
- Solid State Electronics
PaperShallow p+ junction formation by a reverse-type dopant preamorphization scheme
- E. Ganin
- B. Davari
- et al.
- 1989
- Applied Physics Letters
PaperA new planarization technique, using a combination of RIE and chemical mechanical polish (CMP)
- B. Davari
- C. Koburger
- et al.
- 1989
- IEDM 1989
Conference paperNew preamorphization technique for very shallow p+-n junctions
- B. Davari
- E. Ganin
- et al.
- 1989
- VLSI Technology 1989
Conference paperGate materials consideration for submicron CMOS
- C.-Y. Ting
- B. Davari
- 1989
- Applied Surface Science
PaperDoping of n+ and p+ polysilicon in a dual-gate CMOS process
- C.Y. Wong
- J.Y.-C. Sun
- et al.
- 1988
- IEDM 1988
Conference paperVariable-size shallow trench isolation (STI) technology with diffused sidewall doping for submicron CMOS
- B. Davari
- C. Koburger
- et al.
- 1988
- IEDM 1988
Conference paperSource-Drain Contact Resistance in CMOS with Self-Aligned TiSi2
- Yuan Taur
- Jack Yuan-Chen Sun
- et al.
- 1987
- IEEE T-ED
PaperTransient Behavior of Transverse Acousto electric Voltage and Nondestructive Characterization of Semiconductor Surfaces
- B. Davari
- Pankaj K. Das
- 1985
- IEEE Transactions on Sonics and Ultrasonics
Paper