Thermally activated switching in nanoscale magnetic tunnel junctions
- Vladislav Korenivski
- Rainer Leuschner
- 2010
- IEEE Transactions on Magnetics
Paper
Publications
4 results for Rainer Leuschner
A 0.18μm Logic-based MRAM Technology for High Performance Nonvolatile Memory Applications
- A.R. Sitaram
- D.W. Abraham
- et al.
- 2003
- VLSI Technology 2003
Conference paperThermally activated switching of small magnetic tunnel junctions
- R. Leuschner
- V. Korenivski
- et al.
- 2003
- INTERMAG 2003
Conference paperThermally activated switching of small magnetic tunnel junctions
- R. Leuschner
- V. Korenivski
- et al.
- 2003
- INTERMAG 2003
Conference paper