Hot electron effects and saturation velocities in silicon inversion layers
- F. Fang
- A.B. Fowler
- 2003
- Journal of Applied Physics
Paper
Publications
55 results for Alan B. Fowler
Pressure dependence of barrier heights in GeSingle Bond signGaAs n - N heterojunctions
- W.E. Howard
- A.B. Fowler
- et al.
- 2003
- Journal of Applied Physics
PaperHigh temperature 'variable range hopping' conductivity in silicon inversion layers
- A. Hartstein
- A.B. Fowler
- 2001
- Journal of Physics C: Solid State Physics
PaperMetal-insulator transition in a low-mobility two-dimensional electron system
- Dragana Popovic̀
- A.B. Fowler
- et al.
- 1998
- Physica B: Condensed Matter
PaperAbsence of localization in certain field-effect transistors
- S. Washburn
- K.P. Li
- et al.
- 1998
- Superlattices and Microstructures
PaperMetal-insulator transition in two dimensions: Effects of disorder and magnetic field
- Dragana Popovic
- A.B. Fowler
- et al.
- 1997
- Physical Review Letters
PaperEffect of quantum fluctuations of the environment on the Coulomb blockade in a single barrier
- Dragana Popović
- C.J.B. Ford
- et al.
- 1993
- Physical Review B
PaperDetermination of the threshold voltage in sodium-doped metal-oxide- semiconductor structures
- Dragana Popović
- A.B. Fowler
- et al.
- 1991
- Physical Review B
PaperResonant tunneling and hopping through a series of localized states in a two-dimensional electron gas
- Dragana Popović
- A.B. Fowler
- et al.
- 1991
- Physical Review Letters
PaperConductance fluctuations in large metal-oxide-semiconductor structures in the variable-range hopping regime
- Dragana Popović
- A.B. Fowler
- et al.
- 1990
- Physical Review B
Paper