Boron, phosphorus, and arsenic diffusion in tisi2
- P. Gas
- V.R. Deline
- et al.
- 1986
- Journal of Applied Physics
Paper
Publications
35 results for Alwin E. Michel
In Situ Arsenic-Doped Polysilicon for VLSI Applications
- Maurizio Arienzo
- Andrew C. Megdanis
- et al.
- 1986
- IEEE T-ED
PaperInvestigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon
- T.O. Sedgwick
- Alwin E. Michel
- et al.
- 1985
- Applied Physics Letters
PaperLPCVD IN-SITU ARSENIC DOPED POLYSILICON FOR VLSI APPLICATIONS.
- M. Arienzo
- A.C. Megdanis
- et al.
- 1984
- IEDM 1984
Conference paperChanneling in low energy boron ion implantation
- Alwin E. Michel
- R.H. Kastl
- et al.
- 1984
- Applied Physics Letters
PaperThe poly-single crystalline silicon interface
- C.Y. Wong
- Alwin E. Michel
- et al.
- 1984
- Journal of Applied Physics
PaperDiffusion of arsenic in bilayer polycrystalline silicon films
- M. Arienzo
- Y. Komem
- et al.
- 1984
- Journal of Applied Physics
PaperIon-implanted polysilicon diffusion sources
- Alwin E. Michel
- R.H. Kastl
- et al.
- 1983
- Nuclear Instruments and Methods In Physics Research
PaperEffects of Impurity Compensation on Injection Current in Si Bipolar Transistors
- D.D. Tang
- Alwin E. Michel
- 1980
- IEEE T-ED
PaperHigh-energy emission in GaAs electroluminescent diodes
- M.I. Nathan
- T.N. Morgan
- et al.
- 1966
- Physical Review
Paper