Properties of Ge-doped GaAs and Alx Ga1-xAs, Sn-doped Alx Ga1-xAs and Si-Te-doped GaAs
- K.K. Shih
- G.D. Pettit
- 1974
- Journal of Electronic Materials
Paper
Publications
101 results for G.D. Pettit
Enhanced indirect optical absorption in AlAs and GaP
- W.P. Dumke
- M.R. Lorenz
- et al.
- 1972
- Physical Review B
PaperOptical properties of the Ge donor and acceptor in GaP
- M.R. Lorenz
- G.D. Pettit
- et al.
- 1972
- Solid State Communications
PaperIntra- and interband free-carrier absorption and the fundamental absorption edge in n-type InP
- W.P. Dumke
- M.R. Lorenz
- et al.
- 1970
- Physical Review B
PaperThe fundamental absorption edge of AlAs and AlP
- M.R. Lorenz
- R.J. Chicotka
- et al.
- 1970
- Solid State Communications
PaperStructural, optical, and electrical properties of amorphous silicon films
- M.H. Brodsky
- R.S. Title
- et al.
- 1970
- Physical Review B
PaperOn the relation between optical, electrical, and structural properties of amorphous silicon
- M.H. Brodsky
- R.S. Title
- et al.
- 1970
- Journal of Non-Crystalline Solids
PaperElectrical and optical properties of amorphous As2Te3 films
- K. Weiser
- M.H. Brodsky
- et al.
- 1970
- Journal of Non-Crystalline Solids
PaperEPR and luminescence studies of Er+3 in acceptor-doped ZnTe
- Billy L. Crowder
- R.S. Title
- et al.
- 1969
- Physical Review
PaperPair spectra involving Si donors in GaP
- T.N. Morgan
- T.S. Plaskett
- et al.
- 1969
- Physical Review
Paper