Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells
- George Zerveas
- E. Caruso
- et al.
- 2016
- Solid-State Electronics
Paper
Publications
21 results for Mathieu Luisier
An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices
- L. De Michielis
- N. Daǧtekin
- et al.
- 2013
- Applied Physics Letters
PaperCorrections to "on the ballistic injection velocity in deeply scaled MOSFETs"
- Yang Liu
- Mathieu Luisier
- et al.
- 2012
- IEEE T-ED
PaperSimulation study of nanowire tunnel FETs
- Andreas Schenk
- Reto Rhyner
- et al.
- 2012
- DRC 2012
Conference paperPerformance comparisons of III-V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm)
- Seung Hyun Park
- Yang Liu
- et al.
- 2012
- IEEE T-ED
PaperOn the interpretation of ballistic injection velocity in deeply scaled MOSFETs
- Yang Liu
- Mathieu Luisier
- et al.
- 2012
- IEEE T-ED
PaperSub-10 nm carbon nanotube transistor
- Aaron D. Franklin
- Mathieu Luisier
- et al.
- 2012
- Nano Letters
PaperSub-10 nm carbon nanotube transistor
- Aaron D. Franklin
- Shu-Jen Han
- et al.
- 2011
- IEDM 2011
Conference paperAnalysis of Si, InAs, and Si-InAs tunnel diodes and tunnel FETs using different transport models
- Andreas Schenk
- Reto Rhyner
- et al.
- 2011
- SISPAD 2011
Conference paperTemperature dependence of the transconductance in ballistic III-V QWFETs
- Yang Liu
- Mathieu Luisier
- et al.
- 2011
- IEEE T-ED
Paper