Simulation of structural anisotropy and void formation in amorphous thin films
- D. Henderson
- M.H. Brodsky
- et al.
- 2003
- Applied Physics Letters
Paper
Publications
60 results for M.H. Brodsky
Specific energy loss of 4He ions in silicon (amorphous, polycrystalline, and single crystal)
- J.F. Ziegler
- M.H. Brodsky
- 2003
- Journal of Applied Physics
PaperGallium arsenide optoelectronic IC's for computer networks
- M.H. Brodsky
- 1990
- Superlattices and Microstructures
PaperRapid thermal annealing of hydrogenated amorphous silicon grown at low temperature
- P. Fiorini
- I. Haller
- et al.
- 1987
- Journal of Applied Physics
PaperOptical, electrical and contact properties of homoCVD a-Si:H films
- J Kanicki
- B.A Scott
- et al.
- 1985
- Journal of Non-Crystalline Solids
PaperPolytope-like order in random network models of amorphous semiconductors
- D.P. DiVincenzo
- M.H. Brodsky
- 1985
- Journal of Non-Crystalline Solids
PaperSTRUCTURAL BASIS FOR ELECTRONIC COHERENCE IN AMORPHOUS SI AND GE.
- M.H. Brodsky
- D.P. DiVincenzo
- et al.
- 1984
- ICPS Physics of Semiconductors 1984
Conference paperPolytope model and the electronic and structural properties of amorphous semiconductors
- R. Mosseri
- D.P. DiVincenzo
- et al.
- 1985
- Physical Review B
PaperPHOTOCONDUCITIVITY OF INTRINSIC AND DOPED a-Si:H FROM 0. 1 TO 1. 9 ev.
- T. Inushima
- M.H. Brodsky
- et al.
- 1984
- Optical Effects in Amorphous Semiconductors 1984
Conference paperLong-range structural and electronic coherence in amorphous semiconductors
- D.P. DiVincenzo
- R. Mosseri
- et al.
- 1984
- Physical Review B
Paper