Growth and transport properties of thin Bi films on InP(110)
- B.G. Briner
- R.M. Feenstra
- et al.
- 1996
- Semiconductor Science and Technology
Paper
Publications
177 results for J. Woodall
Low-temperature grown III-V materials
- M.R. Melloch
- J. Woodall
- et al.
- 1995
- Annual Review of Materials Science
PaperExperimental comparison of strained quantum-wire and quantum-well laser characteristics
- Sandip Tiwari
- Jerry M. Woodall
- 1994
- Applied Physics Letters
PaperNovel low-resistance ohmic contact to n-type GaAs using Cu3Ge
- M.O. Aboelfotoh
- C.L. Lin
- et al.
- 1994
- Applied Physics Letters
PaperScanning tunneling microscopy and spectroscopy of arsenic antisite defects in GaAs
- R.M. Feenstra
- J. Woodall
- et al.
- 1993
- ICDS 1993
PaperDeep levels and band bending at GaP(100) and (110) surfaces
- L.J. Brillson
- I.M. Vitomirov
- et al.
- 1994
- Surface Science
PaperHigh efficiency and low threshold current strained V-groove quantum-wire lasers
- Sandip Tiwari
- G. David Pettit
- et al.
- 1994
- Applied Physics Letters
PaperGaAs, AlGaAs, and InGaAs epilayers containing As clusters: Semimetal/semiconductor composites
- M.R. Melloch
- J. Woodall
- et al.
- 1993
- Materials Science and Engineering B
PaperHigh transconductance n- and p-channel GaAs MESFETs using novel amphipolar Cu3Ge ohmic contacts
- C.L. Lin
- M.O. Aboelfotoh
- et al.
- 1993
- IEDM 1993
Conference paperTunneling spectroscopy of midgap states induced by arsenic precipitates in low-temperature-grown GaAs
- R.M. Feenstra
- A. Vaterlaus
- et al.
- 1993
- Applied Physics Letters
Paper