Precipitation of arsenic in doped GaAs
- C.L. Chang
- K. Mahalingam
- et al.
- 1993
- Journal of Electronic Materials
Paper
Publications
177 results for J. Woodall
Si diffusion and segregation in low-temperature grown GaAs
- K.L. Kavanagh
- J.C.P. Chang
- et al.
- 1993
- Applied Physics Letters
PaperExperimental observation of a minority electron mobility enhancement in degenerately doped p-type GaAs
- E.S. Harmon
- M.L. Lovejoy
- et al.
- 1993
- Applied Physics Letters
PaperEnhanced electro-optic properties of low-temperature-growth GaAs and AlGaAs
- D.D. Nolte
- M.R. Melloch
- et al.
- 1993
- Applied Physics Letters
PaperGas-source molecular beam epitaxial growth, characterization, and light-emitting diode application of InxGa1-xP on GaP(100)
- T.P. Chin
- J.C.P. Chang
- et al.
- 1993
- Applied Physics Letters
PaperPhotoemission spectroscopy of Al0.27Ga0.73As:As photodiodes
- D.T. McInturff
- J. Woodall
- et al.
- 1993
- Applied Physics Letters
PaperObservation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs
- R.M. Feenstra
- J. Woodall
- et al.
- 1993
- Physical Review Letters
PaperInAs bipolar transistors: A path to high-performance cryogenic electronics
- P.E. Dodd
- M.R. Melloch
- et al.
- 1993
- Device Research Conference 1993
Conference paperBase recombination in high performance InGaAs/InP HBTs
- C.W. Seabury
- C.W. Farley
- et al.
- 1993
- Device Research Conference 1993
Conference paperElectronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopies
- L.J. Brillson
- I.M. Vitomirov
- et al.
- 1993
- Applied Surface Science
Paper