CMOS-compatible replacement metal gate InGaAs-OI FinFET With ION=156μA/μm at VDD= 0.5V and IOFF=100nA/μm
- V. Djara
- Veeresh Deshpande
- et al.
- 2016
- IEEE Electron Device Letters
Paper
Publications
151 results for Marilyne Sousa
Fingerprinting Electronic Molecular Complexes in Liquid
- Peter Nirmalraj
- Andrea La Rosa
- et al.
- 2016
- Scientific Reports
PaperTri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
- V. Djara
- Lukas Czornomaz
- et al.
- 2016
- Solid-State Electronics
PaperComprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells
- George Zerveas
- E. Caruso
- et al.
- 2016
- Solid-State Electronics
PaperHybrid III-V/SiGe technology: Improved n-FET performance and CMOS inverter characteristics
- Lukas Czornomaz
- Nicolas Daix
- et al.
- 2014
- SNW 2014
Conference paperBarium-titanate integrated with silicon photonics for ultra-efficient electro-optical performance
- Stefan Abel
- Thilo Stöferle
- et al.
- 2015
- ECOC 2015
Conference paperLow Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
- V. Djara
- Marilyne Sousa
- et al.
- 2015
- Microelectronic Engineering
PaperAnalysis of the Pockels effect in ferroelectric barium titanate thin films on Si(0 0 1)
- Kristy J. Kormondy
- Stefan Abel
- et al.
- 2015
- Microelectronic Engineering
PaperMaterial and device integration for hybrid III-V/SiGe CMOS technology
- Veeresh Deshpande
- V. Djara
- et al.
- 2015
- ECS Meeting 2015 Phoenix
Conference paperProduction of VO2 thin films through post-deposition annealing of V2O3 and VOx films
- Bart Van Bilzen
- P. Homm
- et al.
- 2015
- Thin Solid Films
Paper