In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
- D.J. Webb
- J. Fompeyrine
- et al.
- 2007
- Microelectronic Engineering
Paper
Publications
151 results for Marilyne Sousa
SrHfO3 as gate dielectric for future CMOS technology
- C. Rossel
- M. Sousa
- et al.
- 2007
- Microelectronic Engineering
PaperEpitaxial germanium-on-insulator grown on (001) Si
- J.W. Seo
- Ch. Dieker
- et al.
- 2007
- Microelectronic Engineering
PaperEnhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics
- Yanning Sun
- E.W. Kiewra
- et al.
- 2007
- IEEE Electron Device Letters
PaperInvestigating the molecular mechanisms of in-plane mechanochemistry on cantilever arrays
- Moyu Watari
- Jane Galbraith
- et al.
- 2006
- JACS
PaperHigh mobility channels for ultimate CMOS
- D.K. Sadana
- S.J. Koester
- et al.
- 2006
- ECS Meeting 2006
Conference paperHigh-K dielectrics for the gate stack
- Jean-Pierre Locquet
- Chiara Marchiori
- et al.
- 2006
- Journal of Applied Physics
ReviewField-effect transistors with SrHfQ3 as gate oxide
- C. Rossel
- B. Mereu
- et al.
- 2006
- Applied Physics Letters
PaperEvidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO 2 gate dielectrics and α-Si/SiO 2 interlayers
- S.J. Koester
- E.W. Kiewra
- et al.
- 2006
- Applied Physics Letters
PaperThermal stability of the SrTi O3 (Ba,Sr) O stacks epitaxially grown on Si
- Chiara Marchiori
- M. Sousa
- et al.
- 2006
- Applied Physics Letters
Paper