Complementary III-V heterostructure tunnel FETs
- Kirsten E. Moselund
- D. Cutaia
- et al.
- 2016
- ESSDERC 2016
Conference paper
Publications
180 results for Heinz Schmid
Ballistic transport and high thermopower in one-dimensional InAs nanowires
- Siegfried Karg
- Vanessa Schaller
- et al.
- 2016
- ESSDERC 2016
Conference paperInvestigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs
- D. Cutaia
- Heinz Schmid
- et al.
- 2016
- SNW 2016
Conference paperComplementary III-V heterojunction lateral NW Tunnel FET technology on Si
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2016
- VLSI Technology 2016
Conference paperTemperature mapping of operating nanoscale devices by scanning probe thermometry
- F. Menges
- Philipp Mensch
- et al.
- 2016
- Nature Communications
PaperIII-V device integration on Si using template-assisted selective epitaxy
- Heinz Schmid
- Mattias Borg
- et al.
- 2015
- DRC 2015
Conference paperTemplate-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si
- Heinz Schmid
- Mattias Borg
- et al.
- 2015
- Applied Physics Letters
PaperVertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2015
- IEEE J-EDS
PaperMechanisms of template-assisted selective epitaxy of InAs nanowires on Si
- Mattias Borg
- Heinz Schmid
- et al.
- 2015
- Journal of Applied Physics
PaperFabrication and analysis of vertical p-type InAs-Si nanowire tunnel FETs
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2015
- EUROSOI-ULIS 2015
Conference paper