Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs
- D. Cutaia
- Heinz Schmid
- et al.
- 2016
- SNW 2016
Conference paper
Publications
118 results for Kirsten E. Moselund
Complementary III-V heterojunction lateral NW Tunnel FET technology on Si
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2016
- VLSI Technology 2016
Conference paperImpact of trap-assisted tunneling and channel quantization on InAs/Si hetero Tunnel FETs
- Saurabh Sant
- Andreas Schenk
- et al.
- 2016
- DRC 2016
Conference paperIII-V-based hetero tunnel FETs: A simulation study with focus on non-ideality effects
- Andreas Schenk
- Saurabh Sant
- et al.
- 2016
- EUROSOI-ULIS 2016
Conference paperIII-V device integration on Si using template-assisted selective epitaxy
- Heinz Schmid
- Mattias Borg
- et al.
- 2015
- DRC 2015
Conference paperTemplate-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si
- Heinz Schmid
- Mattias Borg
- et al.
- 2015
- Applied Physics Letters
PaperComparative simulation study of InAs/Si and All-III-V hetero tunnel FETs
- Andreas Schenk
- Saurabh Sant
- et al.
- 2015
- ECS Meeting 2015 Chicago
Conference paperVertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2015
- IEEE J-EDS
PaperMechanisms of template-assisted selective epitaxy of InAs nanowires on Si
- Mattias Borg
- Heinz Schmid
- et al.
- 2015
- Journal of Applied Physics
PaperFabrication and analysis of vertical p-type InAs-Si nanowire tunnel FETs
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2015
- EUROSOI-ULIS 2015
Conference paper