Ion-beam-induced metastable Pt2Si3 phase. III. Structure and diffusion in amorphous Pt2Si3
- J.F. Graczyk
- K.N. Tu
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- 1982
- Journal of Applied Physics
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Publications
44 results for J.W. Mayer
NiSi formation at the silicide/Si interface on the NiPt/Si system
- G. Ottaviani
- K.N. Tu
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- 1982
- Journal of Applied Physics
PaperThermal stability and growth kinetics of Co2Si and CoSi in thin-film reactions
- K.N. Tu
- G. Ottaviani
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- 1982
- Journal of Applied Physics
PaperEpitaxial NiSi2 formation by pulsed ion beam annealing
- L.J. Chen
- L.S. Hung
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- 1982
- Applied Physics Letters
PaperLattice imaging of silicide-silicon interfaces
- L.J. Chen
- J.W. Mayer
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- 1982
- Thin Solid Films
PaperFormation and structure of epitaxial NiSi2 and CoSi2
- L.J. Chen
- J.W. Mayer
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- 1982
- Thin Solid Films
PaperBarrier heights and silicide formation for Ni, Pd, and Pt on silicon
- G. Ottaviani
- K.N. Tu
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- 1981
- Physical Review B
PaperInterfacial reaction and schottky barrier in metal-silicon systems
- G. Ottaviani
- K.N. Tu
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- 1980
- Physical Review Letters
PaperProperties of the electron-hole condensate in Ge double-injection diodes. I
- V. Marrello
- T.C. McGill
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- 1976
- Physical Review B
PaperProperties of the electron-hole condensate in Ge double-injection diodes. II
- M. Chen
- V. Marrello
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- 1976
- Physical Review B
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