Incoherent mesoscopic hole tunneling through barrier states in p-type AlxGa1-xAs capacitorsT.W. Hickmott1992Physical Review BPaper
Admittance measurements of magnetic freezeout in n - Type GaAsT.W. Hickmott1992Physical Review BPaper
Admittance measurements of acceptor freezeout and impurity conduction in Be-doped GaAsT.W. Hickmott1991Physical Review BPaper
Transverse magnetotunneling in AlxGa1-xAs capacitors. III. Tunneling into interface Landau states in n+-type GaAsT.W. Hickmott1991Physical Review BPaper
A temperature-independent capacitance in semiconductor-insulator- semiconductor capacitorsT.W. HickmottP. Solomon1990Journal of Applied PhysicsPaper
Hole magnetotunneling in p-type AlxGa1-xAs capacitorsT.W. Hickmott1990Solid State CommunicationsPaper
Transverse magnetotunneling in AlxGa1-xAs capacitors. II. Electron phase changes in resonant Fowler-Nordheim tunnelingT.W. Hickmott1989Physical Review BPaper
Tranverse magnetotunneling in AlxGa1-xAs capacitors. I. Angular dependenceT.W. Hickmott1989Physical Review BPaper
Magnetocapacitance measurements of subband separation in an accumulation layer on n - Type GaAsT.W. Hickmott1989Physical Review BPaper
Capacitance measurements of magnetic localization and magnetic freezeout in n - Type GaAsT.W. Hickmott1988Physical Review BPaper