Schottky barrier height measurement by electron-beam induced voltage
- H.-C.W. Huang
- C.F. Aliotta
- et al.
- 1982
- Applied Physics Letters
Paper
Publications
118 results for Paul S. Ho
Material reactions Al/Pd2Si/Si junctions. II. Kinetic rates
- P.S. Ho
- J.E. Lewis
- et al.
- 1982
- Journal of Applied Physics
PaperContactless measurement of schottky barrier heights using secondary electrons
- H.-C.W. Huang
- P.S. Ho
- 1982
- Applied Physics Letters
PaperGrain-boundary diffusion of Sn in Pb
- K.K. Kim
- D. Gupta
- et al.
- 1982
- Journal of Applied Physics
PaperMaterial reactions in Al/Pd2Si/Si junctions. I. Phase stability
- U. Köster
- P.S. Ho
- et al.
- 1982
- Journal of Applied Physics
PaperGeneral aspects of barrier layers for very-large-scale integration applications I: Concepts
- P.S. Ho
- 1982
- Thin Solid Films
PaperElectron beam study of silicide Schottky diodes
- H.-C.W. Huang
- C.F. Aliotta
- et al.
- 1982
- Thin Solid Films
PaperAn X-ray study of domain structure and stress in Pd2Si films at Pd-Si interfaces
- Haydn Chen
- G.E. White
- et al.
- 1982
- Thin Solid Films
PaperElectronic structure of silicide-silicon interfaces
- G.W. Rubloff
- P.S. Ho
- 1982
- Thin Solid Films
PaperElectronic states and microstructure at the silicide-silicon interface
- P.S. Ho
- G.W. Rubloff
- 1982
- Thin Solid Films
Paper