Alkoxide precursors for controlled oxygen incorporation during metalorganic vapor phase epitaxy GaAs and AlxGa1-xAs growth
- J.W. Huang
- D.F. Gaines
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- 1994
- Journal of Electronic Materials
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Publications
47 results for R.M. Potemski
Vertical cavity waveguide spectrometer for WDM communication
- B. Pezeshki
- F. Tong
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- 1993
- LEOS 1993
Conference paperTapered Fabry-Perot Waveguide Optical Demultiplexer
- B. Pezeshki
- F. Tong
- et al.
- 1993
- IEEE Photonics Technology Letters
PaperGrowth behavior of (C2H5)2GaCl and AsH3 based GaAs: low reactor pressure and temperatures
- T.F. Kuech
- R.M. Potemski
- et al.
- 1992
- Journal of Crystal Growth
PaperSimulation of carbon doping of GaAs during MOVPE
- Maurizio Masi
- Harsono Simka
- et al.
- 1992
- Journal of Crystal Growth
PaperQuantitative oxygen measurements in OMVPE Al x Ga1-x As grown by methyl precursors
- T.F. Kuech
- R.M. Potemski
- et al.
- 1992
- Journal of Electronic Materials
PaperThe temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs
- C.C. Han
- X.Z. Wang
- et al.
- 1991
- Journal of Applied Physics
PaperDetermination of epitaxial AlxGa1-xAs composition from x-ray diffraction measurements
- M.S. Goorsky
- T.F. Kuech
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- 1991
- Applied Physics Letters
PaperThermally stable and nonspiking Pd/Sb(Mn) ohmic contact to p-GaAs
- C.C. Han
- X.Z. Wang
- et al.
- 1991
- Applied Physics Letters
PaperCharacterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
Paper