Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetration
- L. Clevenger
- N.A. Bojarczuk
- et al.
- 1993
- Journal of Applied Physics
Review
Publications
122 results for J.M.E. Harper
Rapid evaluations of thin film interfacial reactions using temperature-ramped measurements
- J.M.E. Harper
- L. Clevenger
- et al.
- 1993
- MRS Fall Meeting 1993
Conference paperSilicide formation in Ti-Si and Co-Si reactions
- L. Clevenger
- Q.Z. Hong
- et al.
- 1993
- MRS Proceedings 1993
Conference paperElectrical Resistance and Stress of Bilayer Co(P)/Cu and Ni(P)/Cu Thin Films
- M. Paunovic
- L. Clevenger
- et al.
- 1993
- JES
PaperStress development and relaxation in copper films during thermal cycling
- M.D. Thouless
- J. Gupta
- et al.
- 1993
- Journal of Materials Research
PaperTemperature and substrate dependence of Ar sputtering of CoSi2 thin films
- Q.Z. Hong
- J.M.E. Harper
- 1992
- Journal of Applied Physics
PaperFocused ion beam imaging of grain growth in copper thin films
- J. Gupta
- J.M.E. Harper
- et al.
- 1992
- Applied Physics Letters
PaperKinetic analysis of C49-TiSi2 and C54-TiSi2 formation at rapid thermal annealing rates
- L. Clevenger
- J.M.E. Harper
- et al.
- 1992
- Journal of Applied Physics
PaperTantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions
- Karen Holloway
- Peter M. Fryer
- et al.
- 1992
- Journal of Applied Physics
PaperThe relationship between deposition conditions, the beta to alpha phase transformation, and stress relaxation in tantalum thin films
- L. Clevenger
- A. Mutscheller
- et al.
- 1992
- Journal of Applied Physics
Paper