Scattering-theoretic method for defects in semiconductors. I. Tight-binding description of vacancies in Si, Ge, and GaAs
- J. Bernholc
- Sokrates T. Pantelides
- 1978
- Physical Review B
Paper
Publications
100 results for Sokrates T. Pantelides
Theory of binding energies of acceptors in semiconductors
- J. Bernholc
- Sokrates T. Pantelides
- 1977
- Physical Review B
PaperThe electronic structure of SiO2, GeO2 and intermediate SixGe1-xO2 compositions: experiment and theory
- Sokrates T. Pantelides
- Bernhard Fischer
- et al.
- 1977
- Solid State Communications
PaperOscillator strengths in tetrahedral semiconductors
- Walter A. Harrison
- Sokrates T. Pantelides
- 1976
- Physical Review B
PaperElectronic structure, spectra, and properties of 4:2-coordinated materials. I. Crystalline and amorphous SiO2 and GeO2
- Sokrates T. Pantelides
- Walter A. Harrison
- 1976
- Physical Review B
PaperComment on the valence-band widths of alkali halides
- Sokrates T. Pantelides
- 1976
- Physical Review B
PaperValence bands and density of states for -cristobalite form of SiO2
- S.T. Pantelides
- 1975
- Physics Letters A
PaperLattice-relaxation effects at point imperfections in semiconductors
- Sokrates T. Pantelides
- 1975
- Physical Review B
ReviewMechanisms that determine the electronic dielectric constants of ionic crystals
- Sokrates T. Pantelides
- 1975
- Physical Review Letters
PaperUniversal valence bands for rocksalt-type compounds and their connection with those of tetrahedral crystals
- Sokrates T. Pantelides
- 1975
- Physical Review B
Paper