High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's
- Wu Lu
- Almaz Kuliev
- et al.
- 2000
- IEEE Transactions on Electron Devices
Paper
Publications
139 results at IEEE Transactions on Electron Devices
Fabrication and analysis of deep submicron strained-Si N-MOSFET's
- Kern Rim
- Judy L. Hoyt
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- 2000
- IEEE Transactions on Electron Devices
PaperRF potential of a 0.18-μm CMOS logic device technology
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- Michael Hargrove
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- 2000
- IEEE Transactions on Electron Devices
PaperMOSFET channel length: extraction and interpretation
- Y. Taur
- 2000
- IEEE Transactions on Electron Devices
PaperThe combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's
- Thomas G. Ference
- Jay S. Burnham
- et al.
- 1999
- IEEE Transactions on Electron Devices
PaperRevisiting the analytic theory of p-n junction impedance: Improvements guided by computer simulation leading to a new equivalent circuit
- Steven E. Laux
- Karl Hess
- 1999
- IEEE Transactions on Electron Devices
PaperElectric-field penetration into metals: consequences for high-dielectric-constant capacitors
- Charles T. Black
- Jeffrey J. Welser
- 1999
- IEEE Transactions on Electron Devices
PaperA front-gate charge-pumping method for probing both interfaces in SOI devices
- Yujun Li
- T.P. Ma
- 1998
- IEEE Transactions on Electron Devices
PaperCMOS active pixel image sensors fabricated using a 1.8-V, 0.25-/spl μ/m CMOS technology
- H. Wong
- R. Chang
- et al.
- 1998
- IEEE Transactions on Electron Devices
PaperMeasurement of the switching speed of single FET's
- Keith A. Jenkins
- Joachim N. Burghartz
- 1998
- IEEE Transactions on Electron Devices
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