Complementary p- and n-channel quantum-well MI3SFET's
- R.A. Kiehl
- M.A. Olson
- et al.
- 1988
- IEDM 1988
Conference paper
Publications
14462 results for Physical Sciences
Performance degradation due to extrinsic base encroachment in advanced narrow-emitter bipolar circuits
- C.T. Chuang
- 1988
- IEDM 1988
Conference paperBuried-trench DRAM cell using a self-aligned epitaxy over trench technology
- N.C.-C. Lu
- T.V. Rajeevakumar
- et al.
- 1988
- IEDM 1988
Conference paperElectron beam damage of advanced silicon bipolar transistors and circuits
- Keith A. Jenkins
- J.D. Cressler
- 1988
- IEDM 1988
Conference paperBipolar transistor scaling for minimum switching delay and energy dissipation
- J.M.C. Stork
- 1988
- IEDM 1988
Conference paperHigh performance Si and SiGe-base pnp transistors
- D.L. Harame
- J.M.C. Stork
- et al.
- 1988
- IEDM 1988
Conference paperBroadband dielectric measurements with picosecond transient radiation
- G. Arjavalingam
- Y. Pastol
- et al.
- 1989
- Proceedings of SPIE 1989
Conference paperMonte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
- Massimo V. Fischetti
- Steven E. Laux
- 1988
- Physical Review B
PaperEmpirical interatomic potential for silicon with improved elastic properties
- 1988
- Physical Review B
PaperAbsence of backscattering in the quantum Hall effect in multiprobe conductors
- M. Büttiker
- 1988
- Physical Review B
Paper