Silsesquioxane-based 193 nm bilayer resists: Characterization and lithographic evaluation
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Conference paper
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26925 results for Science
Progress towards developing high performance immersion compatible materials and processes
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Conference paperLine edge roughness reduction by plasma curing photoresists
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Conference paperMolecular resists based on Polyhedral Oligomeric Silsesquioxanes (POSS)
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Conference paperStudies of acid diffusion in low Ea chemically amplified photoresists
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Conference paper193nm single layer photoresists: Defeating tradeoffs with a new class of fluoropolymers
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Conference paperWorking together inside an emailbox
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- 2005
- ECSCW 2005
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- Nano Letters
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