Tungsten-rhenium alloys as diffusion barriers between aluminum and silicon
- S.-E. Hörnström
- T. Lin
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Publications
14467 results for Physical Sciences
Realistic Anderson lattice model of the 214 material solved in mean field
- D.M. Newns
- P.C. Pattnaik
- et al.
- 1988
- Physica C: Superconductivity and its Applications
PaperTheory of ripple topography induced by ion bombardment
- R.Mark Bradley
- James M.E. Harper
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperProperties of hard tungsten films prepared by sputtering
- K.K. Shih
- D.A. Smith
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperDeep levels and minority carrier lifetime in MOVPE p-type GaAs
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Crystal Growth
PaperEpitaxial growth of PbTe on (100) GaAs substrates
- H. Clemens
- P. Ofner
- et al.
- 1988
- Materials Letters
PaperEffect of substrate preparation on the structure and chemisorption properties of Pd/MgO model catalyst
- C.R. Henry
- H. Poppa
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperPhenomena produced by ion bombardment in plasma-assisted etching environments
- Harold F. Winters
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperDeposition and redeposition in magnetrons
- S.M. Rossnagel
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperGas phase and surface reactions in Si doping of GaAs by silanes
- Harry K. Moffat
- T.F. Kuech
- et al.
- 1988
- Journal of Crystal Growth
Paper