Percolation models for gate oxide breakdown
- 1999
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Inhomogeneity in local magnetic field due to susceptibility contrast
- Pabitra N. Sen
- Scott Axelrod
- 1999
- Journal of Applied Physics
PaperNonlinear timing shift in high frequency magnetic recording determined with time resolved Kerr microscopy
- C.H. Back
- A. Taratorin
- et al.
- 1999
- Journal of Applied Physics
PaperOpen volume defects (measured by positron annihilation spectroscopy) in thin film hydrogen-silsesquioxane spin-on-glass; correlation with dielectric constant
- Mihail P. Petkov
- Marc H. Weber
- et al.
- 1999
- Journal of Applied Physics
PaperPhase formation and resistivity in the ternary system Ti-Nb-Si
- Aliette Mouroux
- Marylène Roux
- et al.
- 1999
- Journal of Applied Physics
PaperDefect generation under substrate-hot-electron injection into ultrathin silicon dioxide layers
- D.J. DiMaria
- 1999
- Journal of Applied Physics
PaperComment on "Influence of the doping element on the electron mobility in n silicon" [J. Appl. Phys. 83, 3096 (1998)]
- M.V. Fischetti
- S.E. Laux
- 1999
- Journal of Applied Physics
ReviewDislocation dynamics near film edges and corners in silicon
- K.W. Schwarz
- D. Chidambarrao
- 1999
- Journal of Applied Physics
PaperNumerical simulations of the electrical characteristics and the efficiencies of single-layer organic light emitting diodes
- George G. Malliaras
- J.C. Scott
- 1999
- Journal of Applied Physics
PaperMagnetoresistance, micromagnetism, and domain wall effects in epitaxial Fe and Co structures with stripe domains (invited)
- Andrew D. Kent
- Ulrich Rüdiger
- et al.
- 1999
- Journal of Applied Physics
Paper